作者：Ding, Jian.

出版項：UMI, 1990.

載體形態：

分類號：

語種：英文

關鍵詞：refractory,thermal stability,electrical properties

內容簡介

Further improvement of electrical properties and thermal stability of reactively sputtered refractory metal nitride contacts on GaAs and In-based ohmic contacts to GaAs require a systematic study of the relationships between structural and electrical characteristics at the interface. In this study, the interface morphologies and structures of Nb/GaAs, NbN/GaAs, TiN/GaAs, WN/GaAs and In/GaAs contacts have been investigated before and after annealing at temperature up to 950$/sp/circ$C by transmis